Comparison between optical and electrophysical data on hole concentration in zinc doped p-GaAs

Optical and electrophysical properties of Cz-grown zinc doped p -GaAs samples have been investigated. Middle-infrared reflection spectra ten obtained. Galvanomagnetic Van der Pau measurements made on these also, the values resistivity Hall coefficient calculated. All experiments carried out at room temperature.Reflection processed by Kramers–Kronig relations. The spectral dependences real imaginary parts complex dielectric permittivity obtained loss function has value characteristic wave number corresponding to high-frequency plasmon-phonon mode determined maximum position.The theoretical calculations made, dependence which gave possibility determine heavy hole concentration T = 295K number. Then comparison optical data light mobility ratio determined. This shown be equal (1.9–2.8) is considerably less, than predicted based assumption that both holes are scattered phonons. It suggested scattering mechanisms might quite different.